Hydrogen induced redox mechanism in amorphous carbon resistive random access memory
نویسندگان
چکیده
منابع مشابه
Hydrogen induced redox mechanism in amorphous carbon resistive random access memory
We investigated the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device with amorphous carbon layer. Applying a forming voltage, the amorphous carbon layer was carbonized to form a conjugation double bond conductive filament. We proposed a hydrogen redox model to clarify the resistive switch mechanism of high/low resistance states (HRS/LRS) in carbon ...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2014
ISSN: 1556-276X
DOI: 10.1186/1556-276x-9-52